BFR460L3_13 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – For low voltage / low current applications

Low Noise Silicon Bipolar RF Transistor
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value 1500V (HBM)
• High f_T of 22 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
BFR460L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR460L3
Marking
Pin Configuration
AB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 108°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Value
4.5
4.2
15
15
1.5
50
5
200
150
-55 ... 150
Unit
V
mA
mW
°C
1
2013-09-13