BFR380L3 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR380L3
NPN Silicon RF Transistor
Preliminary data

High current capability and low figure for
wide dynamic range application

Low voltage operation
1

Ideal for low phase noise oscillators up to 3.5 GHz

Low noise figure: 1.1 dB at 1.8 GHz
3
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR380L3
Marking
Pin Configuration
FC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
96°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
6
15
15
2
80
14
380
150
-65 ... 150
-65 ... 150
Value

140
Unit
V
mA
mW
°C
Unit
K/W
1
Jun-16-2003