BFR360L3_13 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Low voltage/ Low current operation

Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation
• For low noise amplifiers
• For Oscillators up to 3.5 GHz and Pout > 10 dBm
• Low noise figure: 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
BFR360L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360L3
Marking
Pin Configuration
FB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 104°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
6
V
15
15
2
35
mA
4
210
mW
150
°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point²⁾
R_thJS
220
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
1
2013-09-03