BFR35AP_13 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
BFR35AP
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR35AP
Marking
Pin Configuration
GEs
1=B
2=E
3=C
Package
SOT23
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 93 °C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
15
20
20
2.5
45
4
280
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
205
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
1
2013-11-21