BFR340F_13 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – General purpose Low Noise Amplifier

Low Noise Silicon Bipolar RF Transistor
• General purpose Low Noise Amplifier
• Ideal for low current operation
• High breakdown voltage enables
operation in automotive applications
• Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.2 x 1.2 mm² ) with visible leads
• Qualification report according to AEC-Q101 available
BFR340F
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR340F
Marking
Pin Configuration
FAs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 110°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
6
V
15
15
2
20
mA
2
75
mW
150
°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point²⁾
R_thJS
530
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
1
2013-11-06