BFR183F Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• f_T = 8 GHz, F = 0.9 dB at 900 MHz
* Short term description
BFR183F
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR183F
Marking
Pin Configuration
RHs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 62 °C
Junction temperature
V_CEO
12
V_CES
20
V_CBO
20
V_EBO
2
I_C
65
I_B
5
P_tot
450
T_j
150
Ambient temperature
T_A
-65 ... 150
Storage temperature
T_stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 195
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
1
2005-10-14