BFR181W_10 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
• f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz
BFR181W
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR181W
Marking
Pin Configuration
RFs
1=B
2=E
3=C
Package
SOT323
Maximum Ratings at T_A = 25 °C
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 90 °C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
12
20
20
2
20
2
175
150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 345
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
1
2010-10-08