BFQ19S_14 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
1
2
3
BFQ19S
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFQ19S
Marking
Pin Configuration
FG
1=B
2=C
3=E
Package
SOT89
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 85°C
Junction temperature
Ambient temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_A
15
V
20
20
3
120
mA
12
1
W
150
°C
-65 ... 150
Storage temperature
T_Stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point²⁾
R_thJS
65
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
1
2014-04-03