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BFP740FE6327 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transist | |||
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NPN Silicon Germanium RF Transistor
⢠High gain ultra low noise RF transistor
⢠Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
⢠Ideal for CDMA and WLAN applications
⢠Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.75 dB at 6 GHz
⢠High maximum stable gain
Gms = 27.5 dB at 1.8 GHz
⢠Gold metallization for extra high reliability
⢠150 GHz fT-Silicon Germanium technology
⢠Pb-free (RoHS compliant) package1)
⢠Qualified according AEC Q101
BFP740F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740F
Marking
Pin Configuration
R7s
1=B 2=E 3=C 4=E -
-
1Pb-containing package may be available upon special request
Package
TSFP-4
2007-04-20
1
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