BFP740F Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor
BFP740F
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
G_ms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f_T-Silicon Germanium technology
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740F
Marking
Pin Configuration
R7s
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0°C
T_A ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 90°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4
3.5
13
13
1.2
30
mA
3
160
mW
150
°C
-65 ... 150
-65 ... 150
2005-11-08
1