BFP740 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP740
NPN Silicon Germanium RF Transistor*
3
4
• High gain ultra low noise RF transistor
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
G_ms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f_T-Silicon Germanium technology
*Short-term description
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP740
Marking
Pin Configuration
R7s
1=B 2=E 3=C 4=E -
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0°C
T_A ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 89°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Package
-
SOT343
Value
4
3.5
13
13
1.2
30
3
160
Unit
V
mA
mW
150
°C
-65 ... 150
-65 ... 150
1
Nov-19-2004