BFP650F_13 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – Linear Low Noise SiGe:C Bipolar RF Transistor

Linear Low Noise SiGe:C Bipolar RF Transistor
• For medium power amplifiers and driver stages
• Based on Infineon' s reliable high volume Silicon
Germanium technology
• High OIP3 and P_-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain G_ma = 21.5 dB at 1.8 GHz
Minimun noise figure NF_min = 0.8 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFP650F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP650F
Marking
Pin Configuration
R5s
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
1
2013-09-06