BFP640F_07 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor*
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
G_ms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz f_T-Silicon Germanium technology
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFP640F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP640F
Marking
Pin Configuration
R4s
1=B 2=E 3=C 4=E -
-
1_{Pb-containing package may be available upon special request}
Package
TSFP-4
2007-05-31
1