BFP640 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP640
NPN Silicon Germanium RF Transistor
3
4
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
1
Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
G_ms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz f_T-Silicon Germanium technology
ESD: Electrostatic discharge sensitive device, observe handling precaution!
2
VPS05605
Type
BFP640
Marking
Pin Configuration
R4s
1=B 2=E 3=C 4=E -
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 90°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Package
-
SOT343
Value
Unit
V
4
3.7
13
13
1.2
50
mA
3
200
mW
150
°C
-65 ... 150
-65 ... 150
1
Apr-21-2004