BFP620FE7764 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP620F E7764
NPN Silicon Germanium RF Transistor
Preliminary data
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G_ms = 21 dB at 1.8 GHz
G_ma = 10 dB at 6 GHz
• Gold metallization for extra high reliability
3
2
4
1
TSFP-4
to p v ie w
4
3
ACs
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP620F E7764 R2s
1=B 2=E 3=C 4=E -
-
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 96°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
2.3
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Value
≤ 290
Unit
V
mA
mW
°C
Unit
K/W
1
Oct-20-2003