BFP620F Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor*
BFP620F
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G_ms = 21 dB at 1.8 GHz
G_ma = 10 dB at 6 GHz
• Gold metallization for extra high reliability
*Short-term description
3
2
4
1
TSFP-4
Top View
34
XYs
12
Direction of Unreeling
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP620F
Marking
Pin Configuration
R2s
1=B 2=E 3=C 4=E -
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
V_CEO
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 96°C
Junction temperature
Ambient temperature
Storage temperature
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Package
-
TSFP-4
Value
Unit
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-65 ... 150
-65 ... 150
1
Apr-21-2004