BFP620E7764 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP620_E7764
NPN Silicon Germanium RF Transistor
3

High gain low noise RF transistor
4

Provides outstanding performance
for a wide range of wireless applications

Ideal for CDMA and WLAN applications

Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz

Maximum stable gain
G_ms = 21.5 dB at 1.8 GHz
G_ma = 11 dB at 6 GHz

Gold metallization for extra high reliability
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP620_E7764 R2s
1=B 2=E 3=C 4=E -
-
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S
95°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
2.3
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Value

300
Unit
V
mA
mW
°C
Unit
K/W
1
Jul-03-2003