BFP540FESD_10 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding G_ms = 20 dB
Noise Figure F = 0.9 dB
• SIEGET ^ 45 - Line
• Pb-free (ROHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFP540FESD
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
BFP540FESD
AUs
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0°C
T_A ≤ 0°C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation²⁾
P_tot
T_S ≤ 80 °C
Junction temperature
T_j
Ambient temperature
T_A
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4.5
4
10
10
1
80
mA
8
250
mW
150
°C
-65 ... 150
-65 ... 150
2010-03-12
1