BFP540F Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
BFP540F
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding G_ms = 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
3
2
4
1
TSFP-4
to p v ie w
4
3
ATs
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP540F
Marking
Pin Configuration
ATs* _{1=B 2=E 3=C 4=E -}
-
Package
TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾ T_S ≤ 80°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
4.5
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
Value
≤ 280
Unit
V
mA
mW
°C
Unit
K/W
1
Jan-28-2004