BFP540ESD Datasheet, PDF (1/9 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor*
BFP540ESD
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding G_ms = 21.5 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET ^ 45 - Line
* Short term description
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540ESD
Marking
Pin Configuration
AUs
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0°C
T_A ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 77°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
4.5
4
10
10
1
80
8
250
150
-65 ... 150
-65 ... 150
Value
≤ 290
Unit
V
mA
mW
°C
Unit
K/W
2006-04-10
1