BFP520F_13 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
Outstanding Gms = 22.5 dB at 1.8 GHz
Minimum noise figure NF_min = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz
• Transition frequency f_T = 45 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFP520F
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520F
Marking
Pin Configuration
APs
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 98 °C
Junction temperature
T_J
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to pcb}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
1
Value
Unit
V
2.5
2.4
10
10
1
50
mA
5
120
mW
150
°C
-55 ... 150
Value
430
Unit
K/W
2013-09-19