BFP420H6327 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – For high gain low noise amplifiers

NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding G_ms = 21 dB at 1.8 GHz
• Transition frequency f_T = 25 GHz
• Gold metallization for high reliability
• SIEGET  25 GHz fT - Line
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BFP420
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420
Marking
Pin Configuration
AMs _{1=B 2=E 3=C 4=E -}
-
Package
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation²⁾
P_tot
T_S ≤ 107 °C
Junction temperature
T_j
Ambient temperature
T_A
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4.5
4.1
15
15
1.5
35
mA
3
160
mW
150
°C
-65 ... 150
-65 ... 150
2009-12-02
1