BFP420F Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

SIEGET
25 ^BFP420F
NPN Silicon RF Transistor
Preliminary data

For high gain low noise amplifiers

Smallest Package 1.4 x 0.8 x 0.59mm

Noise figure F = 1.1 dB at 1.8 GHz
outstanding G_ma = 20 dB at 1.8 GHz
3
2
4
1

Transition frequency f_T = 25 GHz

Gold metallization for high reliability
TSFP-4

SIEGET ^ 25 GHz f_T - Line
to p v ie w
"
!
AM s

d ire c tio n o f u n re e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP420F
Marking
AMs
Pin Configuration
1=B 2=E 3=C 4=E
Package
TSFP-4
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
111°C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
4.5
15
1.5
35
3
160
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}

240
K/W
1
Dec-07-2001