BFP183W Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

NPN Silicon RF Transistor

For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA

f_T = 8 GHz
F = 1.2 dB at 900 MHz
BFP183W
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP183W
Marking
RHs
Pin Configuration
1=E 2=C 3=E 4=B
Package
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
58 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
12
V
20
20
2
65
mA
5
450
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point ²⁾
R_thJS

205
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-10-2001