BFN19_11 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Low collector-emitter saturation voltage

PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN18 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFN19
1
2
3
2
Type
BFN19
Marking
DH
Pin Configuration
1=B
2=C
3=E
Package
SOT89
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S ≤ 130 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
300
300
5
200
500
100
200
1
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
≤ 20
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
W
°C
Unit
K/W
1
2011-09-30