BF999 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz
preferably in FM applications
BF999
3
2
1 _VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF999
Marking
LBs
Pin Configuration
1=G
2=D
3=S
Package
SOT23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, T_S  76 °C
Storage temperature
Channel temperature
Symbol
V_DS
I_D

I_GSM
P_tot
T_stg
T_ch
Value
Unit
20
V
30
mA
10
mA
200
mW
-55 ... 150
°C
150
Thermal Resistance
Channel - soldering point¹⁾
R_thchs
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

370
K/W
1
Nov-08-2002