BF998_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Silicon N_Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BF998...
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF998
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF998R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T_S ≤ 76 °C, BF998, BF998R
Storage temperature
Channel temperature
V_DS
I_D
±I_G1/2SM
P_tot
T_stg
T_ch
Thermal Resistance
Parameter
Symbol
Channel - soldering point²⁾, BF998, BF998R
R_thchs
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
12
30
10
200
-55 ... 150
150
Value
≤ 370
Marking
MOs
MRs
Unit
V
mA
°C
Unit
K/W
1
2007-04-20