BF998 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Silicon N-channel dual-gate MOS-FETs

BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF998
BF998R
BF998W
Package
Pin Configuration
SOT143 1=S 2=D 3=G2 4=G1 -
-
SOT143R 1=D 2=S 3=G1 4=G2 -
-
SOT343 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T_S ≤ 76 °C, BF998, BF998R
T_S ≤ 94 °C, BF998W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point¹⁾
BF998, BF998R
BF998W
Symbol
V_DS
I_D
±I_G1/2SM
P_tot
T_stg
T_ch
Symbol
R_thchs
Value
12
30
10
200
200
-55 ... 150
150
Value
≤ 370
≤ 280
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Marking
MOs
MRs
MR
Unit
V
mA
°C
Unit
K/W
1
Feb-13-2004