BF888 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – High Performance Bipolar NPN RF Transistor

BF888
High Performance Bipolar NPN RF Transistor
• High transducer gain of typ. 14 dB @ 25 mA,6 GHz
• Low minimum noise figure of typ. 0.85 dB @ 6GHz
• High output compression of typ. 11 dBm @ 25 mA
3
4
2
1
• Pb-free (RoHS compliant) package
• For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF888
Marking
Pin Configuration
RYs
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = − 55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 89 °C
Junction temperature
T_J
Ambient temperature
T_A
Storage temperature
T_Stg
1_{Ts is measured on the emitter lead at the soldering point to the pcb}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
V
4.0
3.5
13
13
1.2
30
mA
3
160
mW
150
°C
-55 ... 150
-55 ... 150
Value
Unit
≤ 380
K/W
2010-04-06
1