BF776-H6327 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – High Performance NPN Bipolar RF Transistor

High Performance NPN Bipolar RF Transistor
• High performance low noise amplifier
• Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz
3
4
• For a wide range of non automotive applications
such as WLAN, WiMax, UWB, Bluetooth, GPS,
SDARs, DAB, LNB, UMTS/LTE and ISM bands
• Easy to use standard package with visible leads
• Pb-free (RoHS compliant) package
BF776
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF776
Marking
Pin Configuration
R3s
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 90°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_A
T_Stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
4.0
3.5
13
13
1.2
50
3
200
150
-55 ... 150
-55 ... 150
Value
≤ 300
Unit
V
mA
mW
°C
Unit
K/W
2010-04-06
1