BF543 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz
preferably in FM applications

I_DSS = 4mA, g_fs = 12mS
BF543
3
2
1 _VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF543
Marking
LDs
Pin Configuration
1=G
2=D
3=S
Package
SOT23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, T_S  76 °C
Storage temperature
Ambient temperature range
Channel temperature
Symbol
V_DS
I_D

I_GSM
P_tot
T_stg
T_A
T_ch
Value
20
30
10
200
-55 ... 150
-55 ... 150
150
Thermal Resistance
Channel - soldering point¹⁾
R_thchs

370
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Jun-28-2001