BF5030W Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Silicon N-Channel MOSFET Tetrode

BF5030...
Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-and
VHF - tuners with 3V up to 5V supply voltage
• Integrated gate protection diodes
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
3
4
2
1
AGC
G2
HF
G1
Input
R_G1
V_GG
Drain
HF Output
+ DC
GND
EHA07461
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF5030W
Package
Pin Configuration
Marking
SOT343 1=D 2=S 3=G1 4=G2 -
-
KXs
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS ≤ 78 °C
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
Storage temperature
T_stg
Channel temperature
T_ch
Thermal Resistance
Parameter
Symbol
Channel - soldering point¹⁾
R_thchs
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
8
25
1
6
200
-55 ... 150
150
Value
≤ 280
Unit
V
mA
V
mW
°C
Unit
K/W
1
2006-04-13