BF5020WE6327 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes
• Excellent noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BF5020...
3
4
2
1
AGC
G2
HF
G1
Input
R_G1
V_GG
Drain
HF Output
+ DC
GND
EHA07461
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5020
SOT143 1 = S 2 = D 3 = G2 4 = G1 -
-
BF5020R
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -
-
BF5020W
SOT343 1 = D 2 = S 3 = G1 4 = G2 -
-
Marking
KYs
KYs
KYs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS ≤ 76 °C, BF5020, BF5020R
TS ≤ 94 °C, BF5020W
Storage temperature
Channel temperature
Symbol
V_DS
I_D
I_G1S, I_G2S
V_G1S, V_G2S
P_tot
T_stg
T_ch
Value
8
25
± 10
±6
200
200
-55 ... 150
150
Unit
V
mA
mA
V
mW
°C
1
2009-10-01