BF2030 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
BF2030...
AGC
G2
HF
G1
Input
R_G1
V_GG
Drain
HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
BF2030
BF2030R
BF2030W
Package
Pin Configuration
SOT143 1= S 2=D 3=G2 4=G1 -
-
SOT143R 1= D 2=S 3=G1 4=G2 -
-
SOT343 1= D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T_S ≤ 76 °C, BF2030, BF2030R
T_S ≤ 94 °C, BF2030W
Storage temperature
Channel temperature
Symbol
V_DS
I_D
±I_G1/2SM
+V_G1SE
P_tot
T_stg
T_ch
Value
8
20
10
6
200
200
-55 ... 150
150
Marking
NDs
NDs
ND
Unit
V
mA
V
mW
°C
1
Apr-23-2004