BF1005_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5V
• Integrated biasing network
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BF1005...
AGC
RF
Input
Drain _{RF Output}
G2
+ DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
MZs
MZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T_S ≤ 76 °C
Storage temperature
Channel temperature
V_DS
I_D
±I_G1/2SM
+V_G1SE
P_tot
8
V
25
mA
10
3
V
200
mW
T_stg
-55 ... 150
°C
T_ch
150
1_{Pb-containing package may be available upon special request}
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
2007-04-20