BF1005S Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

BF1005S...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5 V
• Integrated biasing network
AGC
G2
HF
G1
Input
Drain
HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF1005SW
SOT343 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T_S ≤ 76 °C, BF1005S, BF1005SR
T_S ≤ 94 °C, BF1005SW
Storage temperature
Channel temperature
Symbol
V_DS
I_D
±I_G1/2SM
+V_G1SE
P_tot
T_stg
T_ch
Value
8
25
10
3
200
200
-55 ... 150
150
Marking
NZs
NZs
NZ
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
Feb-18-2004