BCX69E6327 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – PNP Silicon AF Transistors

PNP Silicon AF Transistors
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCX69...
1
2
3
2
Type
BCX69-10
BCX69-16
BCX69-25
Marking
CF
CG
CH
Pin Configuration
1=B
2=C
3=E
1=B
2=C
3=E
1=B
2=C
3=E
Package
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S = 114 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
20
25
5
1
2
100
200
3
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
≤ 12
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
A
mA
W
°C
Unit
K/W
1
2011-10-05