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BCX41_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon AF and Switching Transistor | |||
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NPN Silicon AF and Switching Transistor
⢠For general AF applications
⢠High breakdown voltage
⢠Low collector-emitter saturation voltage
⢠Complementary type: BCX42 (PNP)
⢠Pb-free (RoHS compliant) package1)
⢠Qualified according AEC Q101
BCX41
3
2
1
Type
BCX41
Marking
EKs
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation
Ptot
TS ⤠79 °C
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
125
125
5
800
1
100
200
330
150
-65 ... 150
Value
⤠215
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1
2007-04-20
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