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BCX41E6327 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon AF and Switching Transistor | |||
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NPN Silicon AF and Switching Transistor
⢠For general AF applications
⢠High breakdown voltage
⢠Low collector-emitter saturation voltage
⢠Complementary type: BCX42 (PNP)
⢠Pb-free (RoHS compliant) package
⢠Qualified according AEC Q101
BCX41
3
2
1
Type
BCX41
Marking
EKs
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ⤠10 ms
Base current
Peak base current
Total power dissipation
TS ⤠79 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
125
125
5
800
1
100
200
330
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
⤠215
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1
2011-10-04
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