BCW66F_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistors

NPN Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCW66
3
2
1
Type
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
Marking
EFs
EFs
EGs
EGs
EHs
EHs
Pin Configuration
1=B
2=E
3=C
1=B
2=E
3=C
1=B
2=E
3=C
1=B
2=E
3=C
1=B
2=E
3=C
1=B
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
* Shrinked chip version
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T_S ≤ 79 °C, BCW66
T_S ≤ 115 °C, BCW66K
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
45
V
75
5
800
mA
1
A
100
mA
200
mW
330
500
150
°C
-65 ... 150
1
2007-04-20