BCV62_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – PNP Silicon Double Transistor

PNP Silicon Double Transistor
BCV62
• To be used as a current mirror
• Good thermal coupling and V_BE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
3
4
2
1
C1 (2)
C2 (1)
Tr.1
Tr.2
Type
BCV62A
BCV62B
BCV62C
Marking
3Js
3Ks
3Ls
E1 (3)
E2 (4)
EHA00013
1 = C2
1 = C2
1 = C2
Pin Configuration
2 = C1 3 = E1 4 = E2
2 = C1 3 = E1 4 = E2
2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, T_S = 99 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBS
I_C
I_CM
I_BM
P_tot
T_j
T_stg
Value
Unit
30
V
30
6
100
mA
200
200
300
mW
150
°C
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
≤170
K/W
2007-04-20