BCV26_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV27, BCV47 (NPN)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCV26, BCV46
3
2
1
Type
BCV26
BCV46
Marking
FDs
FEs
Pin Configuration
1=B
2=E
3=C
1=B
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
BCV26
BCV46
Symbol
V_CEO
Value
Unit
V
30
60
Collector-base voltage
BCV26
BCV46
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Peak collector current
I_CM
Base current
I_B
Peak base current
I_BM
Total power dissipation-
P_tot
T_S ≤ 74 °C
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
40
80
10
500
mA
800
100
200
360
mW
150
°C
-65 ... 150
1
2007-04-20