BCV26 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP Darlington transistors

PNP Silicon Darlington Transistors

For general AF applications

High collector current

High current gain

Complementary types: BCV27, BCV47 (NPN)
BCV26, BCV46
3
2
1 _VPS05161
Type
BCV26
BCV46
Marking
FDs
FEs
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 74 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
BCV26
BCV46
30
60
40
80
10
10
500
800
100
200
360
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

210
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Jul-13-2001