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BCR583 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
BCR583
PNP Silicon Digital Transistor
 Switching circuit, inverter, interface circuit,
3
driver circuit
 Built in bias resistor (R1=10k, R2 =10k)
C
3
R1
R2
2
1 VPS05161
Type
BCR583
Marking
XMs
1
B
1=B
2
E
EHA07183
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
50
50
10
50
500
330
150
-65 ... 150
 215
Unit
V
mA
mW
°C
K/W
1
Dec-13-2001