BCR503 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit)

BCR503
NPN Silicon Digital Transistor

Switching circuit, inverter, interface circuit,
driver circuit

Built in bias resistor (R₁=2.2k, R₂=2.2k)
C
3
R₁
R₂
3
2
1 _VPS05161
Type
BCR503
Marking
XAs
1
2
B
E
EHA07184
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 79 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
50
50
10
12
500
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

215
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Jun-29-2001