BCR35PN Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)

BCR35PN
NPN/PNP Silicon Digital Transistor Array

Switching circuit, inverter, interface circuit,
driver circuit

Two (galvanic) internal isolated NPN/PNP
Transistors in one package

Built in bias resistor (R₁=10k, R₂=47k)
4
5
6
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1
B2
E2
6
5
4
R₂
R₁
TR2
TR1
R₁
R₂
1
2
3
E1
B1
C2
EHA07176
3
2
1
VPS05604
Type
BCR35PN
Marking
WUs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SOT363
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
50
50
6
20
100
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

140
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Nov-29-2001