BCR179_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit.
• Built in bias resistor (R₁ = 10 kΩ)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCR179...
BCR179F
C
3
R1
1
2
B
E
EHA07180
Type
BCR179F
Marking
Pin Configuration
WWs 1=B 2=E 3=C -
-
-
Package
TSFP-3
1_{Pb-containing package may be available upon special request}
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation
BCR179F, T_S ≤ 128°C
V_CEO
V_CBO
V_i(fwd)
V_i(rev)
I_C
P_tot
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point¹⁾, BCR179F
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
50
50
40
5
100
250
150
-65 ... 150
Value
≤ 90
Unit
V
mA
mW
°C
Unit
K/W
1
2007-07-23