BCR166_07 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R₁ = 4.7 kΩ , R₂ = 47 kΩ )
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCR166...
BCR166/F
BCR166W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR166
BCR166F
BCR166W
Marking
Pin Configuration
WTs 1=B 2=E 3=C -
-
-
WTs 1=B 2=E 3=C -
-
-
WTs 1=B 2=E 3=C -
-
-
Package
SOT23
TSFP-3
SOT323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
V_CEO
V_CBO
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR166, T_S ≤ 102°C
BCR166F, T_S ≤ 128°C
BCR166W, T_S ≤ 124°C
V_i(fwd)
V_i(rev)
I_C
P_tot
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
50
V
50
30
5
100
mA
mW
200
250
250
150
°C
-65 ... 150
1
2007-09-17