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BCR164 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ )
BCR164...
BCR164F/L3
BCR164T
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR164F*
BCR164L3*
BCR164T*
* Preliminary
Marking
U6s
1=B
U6
1=B
U6s
1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR164F, TS ≤ 128°C
BCR164L3, TS ≤ 135°C
BCR164T, TS ≤ 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
-
TSFP-3
-
TSLP-3-4
-
SC75
Value
Unit
50
V
50
5
15
100
mA
mW
250
250
250
150
°C
-65 ... 150
Sep-03-2003