BCR119S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

BCR119S
NPN Silicon Digital Transistor Array

Switching circuit, inverter, interface circuit,
driver circuit

Two ( galvanic) internal isolated Transistors
with good matching in one package

Built in bias resistor (R₁=4.7k)
C1
B2
E2
6
5
4
R₁
TR1
R₁
TR2
4
5
6
3
2
1
VPS05604
Type
BCR119S
Marking
WKs
1
2
3
E1
B1
C2
EHA07265
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
R_thJS
Value
50
50
5
15
100
250
150
-65 ... 150

140
Unit
V
mA
mW
°C
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Nov-29-2001